Silicon photonics has seen much advancement in recent years, driven by the potential to break the cost barrier of optoelectronics through leveraging the low cost manufacturing infrastructure of the CMOS electronics industry. Silicon Raman lasers have been demonstrated, but an electrically pumped laser made of pure silicon has yet to be realized. Hybrid integration approaches that consist of die bonding prefabricated compound semiconductor lasers to silicon waveguides fall short of the requirements needed for high volume silicon photonic integration manufacturing due to the high precision alignment bonding techniques, leading to large variations in coupling losses and scalability limitations. In this dissertation, we present the silicon evanescent laser, an electrically pumped laser architecture that consists of III-V layers bonded to silicon waveguide optical cavities. The optical mode lies primarily in the low loss silicon waveguide while obtaining optical gain through evanescent coupling into the III-V region. Since lateral confinement is controlled by the silicon waveguide fabrication, this self aligned process allows for thousands of lasers to be fabricated on a silicon die in a single bond step. Subsequent processing is done on the III-V but can be conducted using standard lithographic based processing techniques. We have demonstrated electrically pumped Fabry-Perot lasers, racetrack resonator lasers under continuous wave and mode locked operation and distributed feedback (DFB) lasers utilizing this platform.